| PART |
Description |
Maker |
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4F170811D K4F170812D K4F160811D K4F160812D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG[Samsung semiconductor]
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
| V53C806H V53C806H40 V53C806H45 V53C806H50 V53C806H |
High performance 1M x 8bit fast page mode CMOS dynamic RAM
HIGH PERFORMANCE 1M x 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only
70ns 20mA 256K x 8bit CMOS 5.0V-only
100ns 20mA 256K x 8bit CMOS 5.0V-only
120ns 20mA 256K x 8bit CMOS 5.0V-only
150ns 20mA 256K x 8bit CMOS 5.0V-only
90ns 20mA 256K x 8bit CMOS 5.0V-only
55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
| HM6116 HM6116FP-2 HM6116FP-3 HM6116FP-4 HM6116LFP- |
2048-word X 8bit High Speed CMOS Static RAM
IC,SRAM,2KX8,CMOS,DIP,24PIN,CERAMIC
|
HITACHI[Hitachi Semiconductor]
Renesas Electronics Corporation
|
| A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode
50ns 1M x 16bit CMOS dynamic ram with EDO page mode
60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
| K4E151611 K4E151611D K4E151612D K4E171611D K4E1716 |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM)
CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器（的CMOS 256K × 16位快速页面存取模式动态内存）
CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
| IC42S32200/L-6B IC42S32200/L-6BG IC42S32200/L-6BI |
512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
DYNAMIC RAM, SDRAM
|
Integrated Circuit Systems
ICSI
|
| IC41C82052 IC41LV82052 IC41LV82052-60T IC41C82052- |
DYNAMIC RAM, FPM DRAM
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Half-duplex,15-kV ESD, 1/4 UL Transceiver 8-PDIP -40 to 85 200万86兆），充满活力和快速页面模式内
|
ICSI[Integrated Circuit Solution Inc]
Omron Electronics, LLC
|
